Hudson Research announces its new Aluminum Nitride (AlN) thin film process.

Aluminum Nitride is one of the most important materials for state of the art microwave and electro-optic devices.  Its high thermal conductivity approaches that of Beryllium Oxide, but without any of the consequences of the highly toxic Beryllium compound.  We have spent the last six months developing this process and bringing it to a production scale.  Our production facility can handle several hundred wafers per day in this process.  Let us bring this extraordinary material to your product.       Contact us for further details.  

    Click here for Properties of our AlN films