I. STANDARD SHIPLEY 3612 RESIST STRIP FOR NON-METAL WAFERS

• time = 20:00 minutes
• temperature = 120C
• chemical = 9:1 H₂SO₄:H₂O₂

II. RESIST STRIP FOR HEAVY DOSE AND/OR HIGH ENERGY IMPLANTS FOR NON-METAL WAFERS

Matrix O2 asher = matrix

• time = 90 seconds
• program = newlotemp
• temperature = 190C

• time = 20:00 minutes
• temperature = 120C
• chemical = 9:1 H2SO4:H2O2

Repeat Matrix step

and

Sulfuric Peroxide Strip if necessary.

III. STANDARD SHIPLEY 3612 RESIST STRIP FOR METAL WAFERS

• time = 20:00 minutes
• temperature = 40C
• chemical = SVC 127
• dump rinse
• spin dry

Note: Wafers must go into stripper dry.

IV. STANDARD SHIPLEY 3612 RESIST STRIP FOR METAL WAFERS AFTER AMT ETCH

Polymer Strip : this process is to remove polymer buildup. If not removed, the resist will not strip.

• Pressure: 150 mtorr
• F115 flow: 100sccm
• RF Power: 500 watts
• Time: 30 seconds

Resist Strip:

• time = 20:00 minutes
• temperature = 40C
• chemical = SVC 127
• dump rinse
• spin dry

Note: Wafers must go into stripper dry.

Matrix:

• time = 90 seconds
• program = newlotemp

Resist Strip:

• time = 20:00 minutes
• temperature = 40C
• chemical = SVC127
• dump rinse
• spin dry

Note: Wafers must go into stripper dry.